| 发明名称 | Semiconductor device | ||
| 摘要 | The semiconductor device includes a substrate, a first GaN field effect transistor, a second GaN field effect transistor, and a GaN diode. The first GaN field effect transistor is disposed on or above the substrate, and the first GaN field effect transistor is a depletion mode field effect transistor. The second GaN field effect transistor is disposed on or above the substrate, and the second GaN field effect transistor is an enhancement mode field effect transistor. The GaN diode is disposed on or above the substrate. The first GaN field effect transistor, the second GaN field effect transistor, and the GaN diode are disposed on or above a same side of the substrate and electrically connected to each other. | ||
| 申请公布号 | US9484418(B2) | 申请公布日期 | 2016.11.01 |
| 申请号 | US201314083777 | 申请日期 | 2013.11.19 |
| 申请人 | DELTA ELECTRONICS, INC. | 发明人 | Huang Chi-Hsing;Tsai Ming-Wei;Shiue Ching-Chuan;Chuang Po-Chin |
| 分类号 | H01L29/205;H01L29/20;H01L29/778;H01L29/861;H01L27/06;H01L21/8252;H01L27/088 | 主分类号 | H01L29/205 |
| 代理机构 | Hauptman Ham, LLP | 代理人 | Hauptman Ham, LLP |
| 主权项 | 1. A semiconductor device comprising: a substrate; a first GaN field effect transistor disposed on or above the substrate, wherein the first GaN field effect transistor is a depletion mode field effect transistor; a second GaN field effect transistor disposed on or above the substrate, wherein the second GaN field effect transistor is an enhancement mode field effect transistor; a GaN diode disposed on or above the substrate, wherein the first GaN field effect transistor, the second GaN field effect transistor, and the GaN diode are all disposed on or above a same side of the substrate and electrically connected to each other; and a power factor correction diode, wherein an anode of the power factor correction diode is electrically connected to a drain electrode of the first GaN field effect transistor. | ||
| 地址 | TW | ||