Multi-purpose thin film optoelectric sensor

摘要

An optoelectric sensor, comprising: a light-sensitive structure which comprises a substrate and an array of pixel cells located on the substrate, wherein each of the pixel cells comprises a thin film transistor and a photodiode; a fiber optical guide plate located above the light-sensitive structure, which comprises a group of optical fiber bundles configured to be perpendicular to the substrate, and each of the optical fiber bundles has an diameter smaller than or equal to a width of pixel cell; and a backlight source located below the light-sensitive structure. The fiber plate will enable each pixel cell detecting features of an object surface corresponding thereto more independently, so as to improve the resolution of the optoelectric sensor. The optical fiber bundles are configured to be perpendicular to the substrate, and the optoelectric sensor will have a thin structure.

主权项

1. An optoelectric sensor, comprising:
a light-sensitive structure which comprises a substrate and an array of pixel cells located on the substrate, wherein each of the pixel cells comprises a thin film transistor and a photodiode; a fiber optic guide plate located on top of the light-sensitive structure, wherein the fiber optical guide plate comprises an array of optical fiber bundles which are configured to be perpendicular to the substrate, and each of the optical fiber bundles has a diameter smaller than or equal to a width of its corresponding pixel cell; a backlight source located underneath the light-sensitive structure, which is adapted to emitting lights to penetrate through the light-sensitive structure and the fiber optical guide plate; wherein the substrate has a first region and a second region, the thin film transistor is located on the first region, and the photodiode is located on the second region; and wherein the thin film transistor comprises;
a gate located on the first region of the substrate;a first insulating layer covering the gate;a channel layer located on the first insulating layer;a first electrode and a second electrode which are both located on the channel layer, wherein a gap which partially exposes the channel layer is formed between the first electrode and the second electrode; anda second insulating layer covering the first electrode, the second electrode and the channel layer; and wherein the photodiode comprises;
a N doped semiconductor layer located on the second region of the substrate; anda P doped semiconductor layer located on the N doped semiconductor layer; and wherein the first insulating layer, the second electrode and the second insulating layer of the thin film transistor extend to the second region of the substrate, the second insulating layer located on the second region of the substrate has an opening which exposes the second electrode, and the N doped semiconductor layer of the photodiode covers a surface of the second electrode in the opening.