| 摘要 |
PURPOSE:To enable the growth of the crystal at a high growth speed without taking defects therein. CONSTITUTION:A raw material melt which is a melt having the compsn. different from the compsn. of a desired crystal, precipitates the primary crystal different from the desired crystal in a high-temp. side temp. region and precipitates the same crystal as the desired crystal in a low-temp. side temp. region is supercooled from the temp. above the m.p. (liquidus line temp.) down to the low-temp. side temp. region, by which the desired crystal is precipitated. Then, the defectless crystal is grown at the high growth speed without receiving the restriction by the kinds of the crystals. |
