| 摘要 |
<p>A dual damascene structure of little shoulder loss is produced. In a method for forming a dual damascene structure in which an organic LowK film (208) and a mask layer (210) formed thereon are provided as layers to be etched and a shoulder part is provided on the organic LowK film layer, by dry etching with a mixture of at least two gases or more, a first step of etching the mask layer with a first process gas, and then etching the organic LowK film layer with the first process gas to a predetermined depth and a second step of etching the organic LowK film layer with a second process gas after the first step are executed. As a protective wall can be formed on a via side wall by the first step, a shoulder loss formed in a junction region between a trench and a via can be reduced.</p> |
