METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE TO CONTROL INTENSITY OF EMITTED LIGHT BY USING PASSIVATION LAYER

摘要

PURPOSE: A method for manufacturing a semiconductor light emitting device is provided to variably control the intensity of emitted light by using a passivation layer having different refractive index to a substrate. CONSTITUTION: A semiconductor emitting substrate(20) is prepared. A mask layer(21) is formed on the semiconductor emitting substrate. A passivation layer(22) is deposited on the exposed emitting substrate. At this time, the refractive index of the passivation layer is different to the semiconductor emitting substrate.