| 摘要 |
PROBLEM TO BE SOLVED: To provide an organic transistor having a particularly low threshold voltage and superior to a high on/off ratio with a low temperature and simple coating process. SOLUTION: The field effect transistor comprises a source region and a drain region, a channel layer extending between the source region and the drain region comprising an organic semiconductor material, an electric insulating layer comprising an organic/inorganic mixed material arranged adjacently to the channel layer, and a gate region adjacent to the opposite side of the channel layer of the electric insulating layer. COPYRIGHT: (C)2005,JPO&NCIPI
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