发明名称 |
Apparatus and method for controlling exhaust pressure in semiconductor manufacturing |
摘要 |
An apparatus and method for controlling exhaust produced by a reactive chamber is provided. The apparatus for controlling exhaust may include, for example, a valve body having an exhaust hole for the exhaust to pass through, and may include a first and second valve which regulate the opening and/or the closing of the exhaust hole. A control device may control the operation of the first and second valves based on the internal pressure of the reactive chamber.
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申请公布号 |
US7455076(B2) |
申请公布日期 |
2008.11.25 |
申请号 |
US20050032103 |
申请日期 |
2005.01.11 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KWON HYUK-JIN;PARK JONG-CHUL |
分类号 |
F16K3/18;H01L21/02;F16K3/32;F16K3/34 |
主分类号 |
F16K3/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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