发明名称 Apparatus and method for controlling exhaust pressure in semiconductor manufacturing
摘要 An apparatus and method for controlling exhaust produced by a reactive chamber is provided. The apparatus for controlling exhaust may include, for example, a valve body having an exhaust hole for the exhaust to pass through, and may include a first and second valve which regulate the opening and/or the closing of the exhaust hole. A control device may control the operation of the first and second valves based on the internal pressure of the reactive chamber.
申请公布号 US7455076(B2) 申请公布日期 2008.11.25
申请号 US20050032103 申请日期 2005.01.11
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KWON HYUK-JIN;PARK JONG-CHUL
分类号 F16K3/18;H01L21/02;F16K3/32;F16K3/34 主分类号 F16K3/18
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