ELECTRONIC PACKAGES FOR FLIP CHIP DEVICES

摘要

Electronic packages are formed from a generally planar leadframe having a plurality of leads coupled to a GaN-based semiconductor device, and are encased in an encapsulant. The plurality of leads are interdigitated and are at different voltage potentials.

主权项

1. An electronic package comprising:
a leadframe having a thickness extending from a top surface of the leadframe to a bottom surface of the leadframe and comprising:
a first terminal having a plurality of first terminal fingers extending therefrom and a second terminal having a plurality of second terminal fingers extending therefrom wherein the plurality of first terminal fingers are interdigitated with the plurality of second terminal fingers;a third terminal having at least one third terminal finger;wherein the first terminal, the second terminal and the third terminal have a first thickness extending from the top surface of the leadframe to the bottom surface of the leadframe; andwherein the first terminal fingers, the second terminal fingers and the at least one third terminal finger have a second thickness extending from the top surface of the leadframe to an intermediate plane that is located between the top surface and the bottom surface of the leadframe; a GaN-based die electrically coupled to the top surface of the leadframe, and including a source pad having a plurality of source fingers and a drain pad having a plurality of drain fingers wherein the plurality of source fingers are interdigitated with the plurality of drain fingers, and a gate pad; a plurality of interconnects disposed between the GaN-based die and the top surface of the leadframe and configured to provide electrical continuity between the plurality of first terminal fingers and the plurality of drain fingers, between the plurality of second terminal fingers and the plurality of source fingers and between the third terminal finger and the at least one gate pad, respectively; a first encapsulant adhered to the leadframe such that it encapsulates the GaN-based die, the first encapsulant having a thickness that extends from at least the intermediate plane to at least a top surface of the GaN-based die; one or more channels formed in the bottom surface of the leadframe to a depth of at least the intermediate plane; a second encapsulant disposed within the one or more channels.