Accelerated relaxation of strain-relaxed epitaxial buffers by use of integrated or stand-alone thermal processing

摘要

Implementations of the present disclosure generally relate to methods and apparatus for forming a film on a substrate. More particularly, implementations of the present disclosure relate to methods and apparatus for heteroepitaxial growth of crystalline films. In one implementation, a method of heteroepitaxial deposition of a strain relaxed buffer (SRB) layer on a substrate is provided. The method comprises epitaxially depositing a buffer layer over a dissimilar substrate, rapidly heating the buffer layer to relax the buffer layer, rapidly cooling the buffer layer and determining whether the buffer layer has achieved a desired thickness.

主权项

1. A method of heteroepitaxial deposition of a strain relaxed buffer (SRB) layer on a substrate, comprising:
epitaxially depositing a buffer layer over a dissimilar substrate; rapidly heating the buffer layer by exposing the buffer layer to a pulsed laser annealing process to relax the buffer layer; rapidly cooling the buffer layer; and determining whether the buffer layer has achieved a desired thickness, wherein the buffer layer is a material selected from the group consisting of: GaN, AlN, AlGaN, InGaN, InAlGaN, GaAs, InAlAs, Si, Ge, C, Sn, SiGe, SiC, GaSb, AlSb, GaP, AlP, InP, InSb, ZnO, WSe2, MoSe2 and combinations thereof.