Transistors, methods of manufacturing the same, and electronic devices including transistors

摘要

According to example embodiments, a transistor includes a gate, a channel layer that is separate from the gate, a gate insulating layer between the gate and the channel layer, and a source electrode and a drain electrode respectively contacting a first region and a second region of the channel layer. The gate insulating layer includes an impurity metal containing region that includes an impurity metal and contacts the channel layer. The gate insulating layer includes an impurity metal non-containing region contacting the gate that is not doped with the impurity metal.

主权项

1. A transistor comprising:
a gate; a channel layer that is separate from the gate; a gate insulating layer between the gate and the channel layer, the gate insulating layer including an impurity metal containing region that includes an impurity metal and contacts the channel layer, the gate insulating layer including an impurity metal non-containing region that contacts the gate and is not doped with the impurity metal; and a source electrode and a drain electrode respectively contacting a first region and a second region of the channel layer, wherein at least a portion of the impurity metal containing region is between the impurity metal non-containing region and a portion of the channel layer between the source electrode and the drain electrode, the portion of the channel layer not overlapping the source electrode and the drain electrode.