| 发明名称 | Semiconductor arrangement and formation thereof | ||
| 摘要 | A semiconductor arrangement and method of forming the same are described. A semiconductor arrangement includes a third metal connect in contact with a first metal connect in a first active region and a second metal connect in a second active region, and over a shallow trench isolation region located between the first active region and a second active region. A method of forming the semiconductor arrangement includes forming a first opening over the first metal connect, the STI region, and the second metal connect, and forming the third metal connect in the first opening. Forming the third metal connect over the first metal connect and the second metal connect mitigates RC coupling. | ||
| 申请公布号 | US9508844(B2) | 申请公布日期 | 2016.11.29 |
| 申请号 | US201414148172 | 申请日期 | 2014.01.06 |
| 申请人 | Taiwan Semiconductor Manufacturing Company Limited | 发明人 | Wu I-Wen;Wang Mei-Yun;Wang Hsien-Cheng;Liu Shih-Wen;Lee Yun;Wang Chao-Hsun |
| 分类号 | H01L29/78;H01L21/8234;H01L21/84;H01L27/088;H01L27/12 | 主分类号 | H01L29/78 |
| 代理机构 | Cooper Legal Group, LLC | 代理人 | Cooper Legal Group, LLC |
| 主权项 | 1. A semiconductor arrangement comprising: a first active region; a second active region; a shallow trench isolation (STI) region between the first active region and the second active region; a first metal connect over the first active region and connected to the first active region; a second metal connect over the second active region and connected to the second active region; a third metal connect over the first metal connect, the STI region and the second metal connect, and connected to the first metal connect and to the second metal connect; and a gate overlying the first active region, the second active region, and the STI region. | ||
| 地址 | Hsin-Chu TW | ||