| 摘要 |
The present invention relates to a semiconductor drift detector with a folly depleted semiconductor substrate, a first and second radiation entrance window, a sensitive volume, a read out contact and a plurality of drift elements. At least one drift element or alternatively some or alternatively all drift elements of the plurality of drift elements do not entirely surround the read out contact, respectively. A single read out contact may be used and the detector is configured to drive all signal charge carriers which are generated in the sensitive volume of the substrate towards the single read out contact. The electrical connections originating from the read out contact towards the read out electronics or towards the bond pads are provided in such a way that they do not spatially cross high voltage carrying drift elements or gaps between them along their extension on the sensor. In an embodiment, said electrical connections do not spatially cross more than one or any drift element. |
