发明名称 |
Organic light emitting element and method of manufacturing the same |
摘要 |
An organic light emitting element includes an organic light emitting diode formed on a substrate, coupled to a transistor including a gate, a source and a drain and including a first electrode, an organic thin film layer and a second electrode; a photo diode formed on the substrate and having a semiconductor layer including a high-concentration P doping region, a low-concentration P doping region, an intrinsic region and a high-concentration N doping region; and a controller that controls luminance of light emitted from the organic light emitting diode, to a constant level by controlling a voltage applied to the first electrode and the second electrode according to the voltage outputted from the photo diode. |
申请公布号 |
US9368558(B2) |
申请公布日期 |
2016.06.14 |
申请号 |
US201314089020 |
申请日期 |
2013.11.25 |
申请人 |
Samsung Display Co., Ltd. |
发明人 |
Lee Yun-gyu;Choi Byoung-deog;Park Hye-hyang;Im Ki-ju |
分类号 |
H01L51/40;H01L27/32 |
主分类号 |
H01L51/40 |
代理机构 |
H.C. Park & Associates, PLC |
代理人 |
H.C. Park & Associates, PLC |
主权项 |
1. A method of manufacturing an organic light emitting element, the method comprising:
forming a first semiconductor layer in a first area and a second semiconductor layer in a second area on a substrate or on a buffer layer formed on the substrate; forming an asymmetric photo diode by forming a high-concentration P doping region at a first side of the first area, a low-concentration P doping region making a junction with the high-concentration P doping region, an intrinsic region making a junction with the low-concentration P doping region, and a high concentration N doping region making a junction with the intrinsic region and at a second side of the first area in the first semiconductor layer; forming a transistor by forming a source region in the second semiconductor layer at a first side of the second area, a drain region in the second semiconductor layer at a second side of the second area, and a channel region between the source region and the drain region in the second semiconductor layer, and forming a gate electrode over and insulated from the channel region; and forming an organic light emitting diode electrically connected to the transistor. |
地址 |
Yongin-si KR |