发明名称 Organic light emitting element and method of manufacturing the same
摘要 An organic light emitting element includes an organic light emitting diode formed on a substrate, coupled to a transistor including a gate, a source and a drain and including a first electrode, an organic thin film layer and a second electrode; a photo diode formed on the substrate and having a semiconductor layer including a high-concentration P doping region, a low-concentration P doping region, an intrinsic region and a high-concentration N doping region; and a controller that controls luminance of light emitted from the organic light emitting diode, to a constant level by controlling a voltage applied to the first electrode and the second electrode according to the voltage outputted from the photo diode.
申请公布号 US9368558(B2) 申请公布日期 2016.06.14
申请号 US201314089020 申请日期 2013.11.25
申请人 Samsung Display Co., Ltd. 发明人 Lee Yun-gyu;Choi Byoung-deog;Park Hye-hyang;Im Ki-ju
分类号 H01L51/40;H01L27/32 主分类号 H01L51/40
代理机构 H.C. Park & Associates, PLC 代理人 H.C. Park & Associates, PLC
主权项 1. A method of manufacturing an organic light emitting element, the method comprising: forming a first semiconductor layer in a first area and a second semiconductor layer in a second area on a substrate or on a buffer layer formed on the substrate; forming an asymmetric photo diode by forming a high-concentration P doping region at a first side of the first area, a low-concentration P doping region making a junction with the high-concentration P doping region, an intrinsic region making a junction with the low-concentration P doping region, and a high concentration N doping region making a junction with the intrinsic region and at a second side of the first area in the first semiconductor layer; forming a transistor by forming a source region in the second semiconductor layer at a first side of the second area, a drain region in the second semiconductor layer at a second side of the second area, and a channel region between the source region and the drain region in the second semiconductor layer, and forming a gate electrode over and insulated from the channel region; and forming an organic light emitting diode electrically connected to the transistor.
地址 Yongin-si KR