发明名称 Semiconductor device
摘要 Two rows of resistive bodies, first resistive body and second resistive body, having slits are provided on an input matching circuit substrate. Since a high-frequency signal flows through not only the resistive bodies but also a transmission line pattern formed in the slits, the burnout of the resistive bodies can be prevented.
申请公布号 US9508787(B2) 申请公布日期 2016.11.29
申请号 US201514931895 申请日期 2015.11.04
申请人 Mitsubishi Electric Corporation 发明人 Yoshioka Takaaki
分类号 H01L23/66;H01L23/522;H01L21/768;H01L27/06;H01L49/02 主分类号 H01L23/66
代理机构 Studebaker & Brackett PC 代理人 Studebaker & Brackett PC
主权项 1. A semiconductor device comprising: a package; an input electrode fixed to the package; an input matching circuit substrate provided in the package; a transmission line pattern formed on the input matching circuit substrate; a first resistive body formed on the input matching circuit substrate, the first resistive body having a first slit formed therein; a second resistive body formed on the input matching circuit substrate, the second resistive body having a second slit formed therein; an amplifier provided in the package; a first connecting body for electrically connecting the input electrode and the transmission line pattern; and a second connecting body for electrically connecting the transmission line pattern and the amplifier, wherein the transmission line pattern exists in the first slit and the second slit, and the first resistive body and the second resistive body are located between a first connection point and a second connection point, the first connection point being a point at which the first connecting body contacts the transmission line pattern, the second connection point being a point at which the second connecting body contacts the transmission line pattern.
地址 Tokyo JP