IMAGE SENSOR, METHOD FOR MANUFACTURING THE SAME, AND IMAGE PROCESSING DEVICE HAVING THE IMAGE SENSOR

摘要

An image sensor comprising: a first layer having a plurality of groups of photodiodes formed in a semiconductor substrate, each group representing a 2×2 array of photodiodes, with 2 first pixels configured to detect light of a first wavelength and 2 second pixels configured to detect light of a second wavelength, each first pixel positioned adjacent to the second pixels; and a second layer overlapping the first layer, the second layer is organic, having a plurality of organic photodiodes configured to detect light of a third wavelength, each organic photodiode positioned to partially overlap 2 first photodiodes and 2 second photodiodes of the first layer.

主权项

1. An image sensor comprising:
a semiconductor substrate; a first layer including a plurality of groups of photodiodes formed in the semiconductor substrate, each of the plurality of groups of photodiodes representing an n×m array of photodiodes, n being an integer equal to or greater than two, m being a positive integer; and a second layer disposed on the first layer and including a plurality of organic photodiodes, the second layer at least partially overlapping the first layer, wherein each of the plurality of groups of photodiodes of the first layer includes a plurality of first photodiodes configured to detect light of a first wavelength and a plurality of second photodiodes configured to detect light of a second wavelength, the plurality of organic photodiodes are configured to detect light of a third wavelength, and each of the plurality of organic photodiodes partially overlaps at least one among the plurality of first photodiodes and partially overlaps at least one among the plurality of second photodiodes.