| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
According to one embodiment, a semiconductor device includes a semiconductor substrate, a first film, a conductive member and a second film. The first film is provided on the semiconductor substrate. The conductive member is provided in the first film, extends in a direction parallel to a main surface of the semiconductor substrate, and has a compressive stress. The second film is provided between the first film and the conductive member and has a tensile stress. |
| 申请公布号 |
US2016365445(A1) |
申请公布日期 |
2016.12.15 |
| 申请号 |
US201514835909 |
申请日期 |
2015.08.26 |
| 申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
Oshima Yasunori;Iinuma Toshihiko;Ito Takayuki |
| 分类号 |
H01L29/78;H01L21/28;H01L27/115 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a semiconductor substrate; a first film provided on the semiconductor substrate; a conductive member provided in the first film, extending in a direction parallel to a main surface of the semiconductor substrate, and having a compressive stress; and a second film provided between the first film and the conductive member and having a tensile stress. |
| 地址 |
Minato-ku JP |
