发明名称 |
III-N TRANSISTORS WITH EPITAXIAL LAYERS PROVIDING STEEP SUBTHRESHOLD SWING |
摘要 |
III-N transistors with epitaxial semiconductor heterostructures having steep subthreshold slope are described. In embodiments, a III-N HFET employs a gate stack with balanced and opposing III-N polarization materials. Overall effective polarization of the opposing III-N polarization materials may be modulated by an external field, for example associated with an applied gate electrode voltage. In embodiments, polarization strength differences between the III-N materials within the gate stack are tuned by composition and/or film thickness to achieve a desired transistor threshold voltage (Vt). With polarization strengths within the gate stack balanced and opposing each other, both forward and reverse gate voltage sweeps may generate a steep sub-threshold swing in drain current as charge carriers are transferred to and from the III-N polarization layers and the III-N channel semiconductor. |
申请公布号 |
US2016365435(A1) |
申请公布日期 |
2016.12.15 |
申请号 |
US201415120732 |
申请日期 |
2014.03.25 |
申请人 |
Then Han Wui;Dasgupta Sansaptak;Radosavljevic Marko;Chau Robert S. |
发明人 |
Then Han Wui;Dasgupta Sansaptak;Radosavljevic Marko;Chau Robert S. |
分类号 |
H01L29/778;H01L29/20;H01L29/423;H01L29/08 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Portland OR US |