THIN FILM TRANSISTOR SUBSTRATE AND ORGANIC LIGHT-EMITTING DIODE DISPLAY INCLUDING THE SAME

摘要

A thin film transistor substrate and an organic light-emitting diode display including the same are disclosed. In one aspect, the TFT substrate includes substrate and a TFT located on the substrate. The TFT includes a lower gate electrode, a first insulating layer covering the lower gate electrode, an oxide semiconductor layer located on the first insulating layer, a first electrode located on the oxide semiconductor layer and having an island shape, a second electrode located on the oxide semiconductor layer and surrounding the first electrode, a second insulating layer at least partially covering the oxide semiconductor layer; and an upper gate electrode located on the second insulating layer. The oxide semiconductor layer includes a first region, a second region surrounding the first region, and a third region interposed between the first and second regions.

主权项

1. A thin film transistor (TFT) substrate, comprising:
a substrate; and a TFT located on the substrate and comprising:
a lower gate electrode;a first insulating layer covering the lower gate electrode;an oxide semiconductor layer located on the first insulating layer;a first electrode located on the oxide semiconductor layer and having an island shape;a second electrode located on the oxide semiconductor layer and surrounding the first electrode;a second insulating layer at least partially covering the oxide semiconductor layer; andan upper gate electrode located on the second insulating layer, wherein the oxide semiconductor layer includes a first region, a second region surrounding the first region, and a third region interposed between the first and second regions, wherein the first electrode is located in the first region of the oxide semiconductor layer, wherein the second electrode is located in the second region of the oxide semiconductor layer, wherein the lower and upper gate electrodes face each other, and wherein the third region of the oxide semiconductor layer is interposed between the lower and upper gate electrodes.