| 发明名称 | Method of fabricating zinc oxide nanostructures using liquid masking layer | ||
| 摘要 | A method of preparing zinc oxide nanostructures using a liquid masking layer is disclosed. The method includes preparing a substrate having a zinc oxide seed layer formed thereon; loading the substrate in a reactor in which a lower liquid masking layer, a precursor liquid layer for hydrothermal growth, and an upper liquid masking layer are disposed in order; and forming zinc oxide nanostructures in a pattern on the substrate through hydrothermal growth by heating the precursor liquid layer for hydrothermal growth. | ||
| 申请公布号 | US9368346(B2) | 申请公布日期 | 2016.06.14 |
| 申请号 | US201414584446 | 申请日期 | 2014.12.29 |
| 申请人 | GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY | 发明人 | Ko Heung-Cho;Jang Hun-Soo;Jung Gun-Young;Son Bokyeong;Song Hui |
| 分类号 | H01L21/02;H01L51/00;B82Y30/00;B82Y40/00 | 主分类号 | H01L21/02 |
| 代理机构 | Hauptman Ham, LLP | 代理人 | Hauptman Ham, LLP |
| 主权项 | 1. A method of preparing zinc oxide nanostructures using a liquid masking layer, comprising: preparing a substrate having a zinc oxide seed layer formed thereon; loading the substrate in a reactor in which a lower liquid masking layer, a precursor liquid layer for hydrothermal growth, and an upper liquid masking layer are disposed in order; and forming zinc oxide nanostructures in a pattern on the substrate through hydrothermal growth by heating the precursor liquid layer for hydrothermal growth. | ||
| 地址 | Gwangju KR | ||