发明名称 |
Variable reference voltage circuit for non-volatile memory |
摘要 |
A variable reference voltage circuit for performing memory operation on non-volatile memory includes a multi-level voltage source and a selector circuit. The multi-level voltage source generates multiple voltages. The selector circuit includes a selector input and a selector output. The selector input is coupled to the multi-level voltage source to selectively couple any of the multiple voltages to the selector output. The selector output of the selector circuit is coupled to a non-volatile memory array to provide the NV memory array with a selectable program voltage for programming the NV memory array and a selectable erase voltage for erasing the NV memory array.
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申请公布号 |
US2007217271(A1) |
申请公布日期 |
2007.09.20 |
申请号 |
US20060385235 |
申请日期 |
2006.03.20 |
申请人 |
KUTZ HAROLD;ROUSE MARK;BLOM ERIC D |
发明人 |
KUTZ HAROLD;ROUSE MARK;BLOM ERIC D. |
分类号 |
G11C5/14 |
主分类号 |
G11C5/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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