发明名称 Variable reference voltage circuit for non-volatile memory
摘要 A variable reference voltage circuit for performing memory operation on non-volatile memory includes a multi-level voltage source and a selector circuit. The multi-level voltage source generates multiple voltages. The selector circuit includes a selector input and a selector output. The selector input is coupled to the multi-level voltage source to selectively couple any of the multiple voltages to the selector output. The selector output of the selector circuit is coupled to a non-volatile memory array to provide the NV memory array with a selectable program voltage for programming the NV memory array and a selectable erase voltage for erasing the NV memory array.
申请公布号 US2007217271(A1) 申请公布日期 2007.09.20
申请号 US20060385235 申请日期 2006.03.20
申请人 KUTZ HAROLD;ROUSE MARK;BLOM ERIC D 发明人 KUTZ HAROLD;ROUSE MARK;BLOM ERIC D.
分类号 G11C5/14 主分类号 G11C5/14
代理机构 代理人
主权项
地址