Backside sensing bioFET with enhanced performance

摘要

The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a substrate, a transistor structure having a treated layer adjacent to the channel region, an isolation layer, and a dielectric layer in an opening of the isolation layer on the treated layer. The dielectric layer and the treated layer are disposed on opposite side of the transistor from a gate structure. The treated layer may be a lightly doped channel layer or a depleted layer.

主权项

1. A biological field-effect transistors (BioFET) device, comprising:
a substrate; a transistor structure in the substrate having a gate structure over a source region, a drain region, and an active region, the active region including a channel region and a treated layer; an isolation layer on a side of the substrate opposite from the gate structure, said isolation layer having an opening at the active region of the transistor structure; and a dielectric layer in the opening.