发明名称 Nanostructured graphene with atomically-smooth edges
摘要 Methods of producing layers of patterned graphene with smooth edges are provided. The methods comprise the steps of fabricating a layer of crystalline graphene on a surface, wherein the layer of crystalline graphene has a crystallographically disordered edge, and decreasing the crystallographic disorder of the edge of the layer of crystalline graphene by heating the layer of crystalline graphene on the surface at an elevated temperature in a catalytic environment comprising carbon-containing molecules.
申请公布号 US9394177(B2) 申请公布日期 2016.07.19
申请号 US201113282666 申请日期 2011.10.27
申请人 Wisconsin Alumni Research Foundation 发明人 Arnold Michael S.;Gopalan Padma;Safron Nathaniel S.;Kim Myungwoong
分类号 C23C16/00;C23C16/26;C01B31/04;B82Y30/00;B82Y40/00 主分类号 C23C16/00
代理机构 Bell & Manning, LLC 代理人 Bell & Manning, LLC
主权项 1. A method for fabricating graphene structures, the method comprising: (a) growing a layer of crystalline graphene on a surface via vapor deposition, wherein the layer of crystalline graphene is grown with one or more crystallographically disordered edges; (b) discontinuing the vapor deposition growth of the layer of crystalline graphene with one or more crystallographically disordered edges; and (c) subsequently decreasing the crystallographic disorder of the one or more crystallographically disordered edges by heating the layer of crystalline graphene on the surface at an elevated temperature in a catalytic environment comprising carbon-containing molecules, wherein the decrease in crystallographic disorder is catalyzed by the surface and occurs without the continued vapor deposition growth of the layer of crystalline graphene.
地址 Madison WI US