发明名称 |
OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE |
摘要 |
It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed. |
申请公布号 |
US2016218226(A1) |
申请公布日期 |
2016.07.28 |
申请号 |
US201615090937 |
申请日期 |
2016.04.05 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
YAMAZAKI Shunpei;SAKAKURA Masayuki;WATANABE Ryosuke;SAKATA Junichiro;AKIMOTO Kengo;MIYANAGA Akiharu;HIROHASHI Takuya;KISHIDA Hideyuki |
分类号 |
H01L29/786;H01L29/04;H01L29/24 |
主分类号 |
H01L29/786 |
代理机构 |
|
代理人 |
|
主权项 |
1. (canceled) |
地址 |
Atsugi-shi JP |