发明名称 METHOD OF PRODUCING HIGHLY EFFICIENT AND ELECTRICALLY STABLE SEMICONDUCTOR LAYERS OF METAL OXIDES, LAYERS MADE USING THIS METHOD, AND USE THEREOF
摘要 FIELD: electronics.SUBSTANCE: this invention relates to a method of semiconductor laminate producing which includes first and second layers of metal oxide, as well as a dielectric layer, wherein the first metal oxide layer is located between the second layer of metal oxide and dielectric layer and has thickness equal to or less than 20 nm. First and second layers of metal oxides are made from the first and second liquid phases respectively. This invention also relates to electronic components which include such semiconductor laminate.EFFECT: invention allows to increase electrical stability of structure layers without reducing the mobility of charge carriers in semiconductor layer.28 cl, 3 dwg, 1 tbl
申请公布号 RU2601210(C2) 申请公布日期 2016.10.27
申请号 RU20140118033 申请日期 2012.09.12
申请人 EVONIK DEGUSSA GMBKH 发明人 SHTAJGER YUrgen;PAM Dui Vu;NOJMANN Anita;MERKULOV Aleksej;KHOPPE Arne
分类号 H01L29/786;H01L21/316 主分类号 H01L29/786
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