发明名称 |
Magnetic element with improved field response and fabricative method thereof |
摘要 |
<p>An improved and novel device and fabrication method for a magnetic element, and more particularly a magnetic element (10) including a first electrode (14), a second electrode (18) and a spacer layer (16). The first electrode (14) includes a fixed ferromagnetic layer (26). A second electrode (18) is included and comprises a free ferromagnetic layer (28). A spacer layer (16) is located between the fixed ferromagnetic layer (26) and the free ferromagnetic (28) layer, the spacer layer (16). At least one additional layer (20 & 22) is provided between the base metal layer (13) and the spacer layer (16). The base metal layer (13) or at least one of the layers positioned between the base metal layer (13) and the spacer layer (16) having an x-ray amorphous structure such that a reduced topological coupling strength between the free ferromagnetic layer (28) and the fixed ferromagnetic layer (26) is achieved. <IMAGE></p> |
申请公布号 |
EP1094329(A2) |
申请公布日期 |
2001.04.25 |
申请号 |
EP20000122809 |
申请日期 |
2000.10.19 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
SLAUGHTER, JON;SHI, JING;CHEN, EUGENE;THERANI, SALED |
分类号 |
G01R33/09;G11B5/39;G11B5/716;G11C11/14;H01F10/16;G11C11/15;H01F10/13;H01F10/14;H01F10/32;H01L21/8246;H01L27/105;H01L43/08;H01L43/12;(IPC1-7):G01R33/09 |
主分类号 |
G01R33/09 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|