| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pattern forming method which is for use in the production process of a semiconductor such as IC, in the production of a circuit substrate of liquid crystal, thermal head and the like or in other photofabrication processes, and by which development defects occurring after development are corrected in liquid immersion exposure. <P>SOLUTION: The pattern forming method uses a specific positive resist composition and comprises: (1) a process of applying the positive resist composition to a substrate to form a resist coating; (2) a process of exposing the resist coating to light via an immersion liquid; (3) a process of removing the immersion liquid remaining on the resist coating; (4) a process of heating the resist coating; and (5) a process of developing the resist coating. <P>COPYRIGHT: (C)2007,JPO&INPIT |
