| 摘要 |
An embodiment of a process for manufacturing a TFT transistor on a substrate comprising the steps of: forming an amorphous silicon layer on the substrate, carrying out a crystallization process of the amorphous silicon layer to form a layer of polycrystalline silicon defining an active area of the TFT transistor in the layer of polycrystalline silicon; forming a dielectric layer on the active area; forming a gate electrode of the TFT transistor on the dielectric layer; carrying out a single ionic implantation step to realize source/drain regions of the TFT transistor, the ionic implantation step being carried out with a tilt or angled with respect to a normal to a plane defined by the substrate, the tilt angle with respect to the normal to the plane defined by the substrate being comprised in the range of approximately between 7° and 45°. carrying out an activation process of the source/drain regions which does not substantially modify the lateral doping profile of the source/drain regions determined during the implant step.
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