Devices with thinned wafer

摘要

Methods, apparatuses and devices are described where a main wafer is irreversibly bonded to a carrier wafer and thinned to reduce a thickness of the main wafer, for example down to a thickness of 300 μm or below.

主权项

1. A method, comprising:
irreversibly bonding a semiconductor main wafer to a glass carrier wafer at a front side of the semiconductor main wafer, thinning the semiconductor main wafer from a back side of the semiconductor main wafer, selectively removing material from the back side of the semiconductor main wafer, irreversibly bonding an additional glass carrier wafer at the back side of the semiconductor main wafer, wherein the glass carrier wafer and the additional glass carrier wafer are directly bonded to the main wafer.