Precisely controlling III-V height

摘要

After forming trenches extending through a dielectric material stack including, from bottom to top, a first dielectric layer, a second dielectric layer and a third dielectric layer that is located over a semiconductor substrate, a fin stack of, from bottom to top, an insulating III-V compound material fin portion and a III-V compound semiconductor fin is formed within each trench. The third dielectric layer is removed to expose a first portion of each III-V compound semiconductor fin. After forming a sidewall spacer on sidewalls of the first portion of each III-V compound semiconductor fin, the second dielectric layer is removed to expose a second portion of each III-V compound semiconductor fin. The exposed second portion of each III-V compound semiconductor fin is removed. The remaining first portion of each III-V compound semiconductor fin constitutes an active portion over which a FinFET is subsequently formed.

主权项

1. A semiconductor structure comprising:
a fin stack of, from bottom to top, an insulating III-V compound material fin portion and an embedded III-V compound semiconductor fin portion located over a semiconductor substrate and laterally surrounded by a dielectric layer; an insulator portion located over the dielectric layer and the embedded III-V compound semiconductor fin portion; and a channel III-V compound semiconductor fin portion located over the insulator portion.