发明名称 |
Solid state relay using capacitive isolation |
摘要 |
An oscillator supplies a clock signal having a frequency determined in part according to a received current. A transmit side charge pump is coupled to the clock signal and boosts a voltage supplied to the charge pump to generate a boosted voltage. A driver circuit drives a transmit signal having a frequency based on the clock signal and a voltage based on the boosted voltage to a capacitive isolation communication path. A receive side charge pump is coupled to the isolation capacitors of the isolation communication path and boosts a voltage of the received signal on the receive side of the isolation communication path and supplies a gate signal with the boosted voltage to a gate of at least one transistor. |
申请公布号 |
US9531376(B2) |
申请公布日期 |
2016.12.27 |
申请号 |
US201514725558 |
申请日期 |
2015.05.29 |
申请人 |
Silicon Laboratories Inc. |
发明人 |
Sonntag Jeffrey L.;Dupuis Timothy J. |
分类号 |
H03K17/687;H02M3/07 |
主分类号 |
H03K17/687 |
代理机构 |
Zagorin Cave LLP |
代理人 |
Zagorin Cave LLP |
主权项 |
1. An apparatus comprising:
a first die including,
an oscillator to supply a clock signal;a transmit side charge pump coupled to the clock signal to generate a transmit side boosted voltage;a driver circuit coupled to the clock signal and coupled to the transmit side charge pump to drive a transmit signal indicating an on state to a capacitive isolation communication channel, the transmit signal having a frequency based on the clock signal and a voltage based on the transmit side boosted voltage, the driver circuit driving no signal in response to an off state; a second die coupled to the first die through the capacitive isolation communication channel, the second die including,
a second charge pump coupled to isolation capacitors of the capacitive isolation communication channel to boost a voltage based on a voltage of the transmit signal as received on a receive side of the capacitive isolation communication channel and supply a receive side boosted voltage, and to supply a gate voltage signal based on the receive side boosted voltage to a gate of a first transistor. |
地址 |
Austin TX US |