发明名称 Wordline driver for semiconductor memory device
摘要 A wordline driver for a memory device includes a row decoder decoding externally inputted row address signals and outputting a main decoding signal and a main decoding bar signal, a wordline drive decoder decoding two lowest bits among the row address signals and outputting a global decoding signal, a local wordline driver receiving first and second signals and outputting a local wordline driving signal in accordance with the global decoding signal corresponding to the wordline drive decoder, and a sub-wordline driver coupled to the wordline drive decoder and the local wordline driver and outputting a sub-wordline driving signal to a sub-wordline in accordance with the local wordline decoding signal from the local wordline driver, and the main decoding signal and the main decoding bar signal outputted from the row decoder.
申请公布号 US5986938(A) 申请公布日期 1999.11.16
申请号 US19980168983 申请日期 1998.10.09
申请人 LG SEMICON CO., LTD. 发明人 JANG, SEONG-JIN
分类号 G11C8/10;G11C8/14;(IPC1-7):G11C16/06 主分类号 G11C8/10
代理机构 代理人
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