| 摘要 |
PROBLEM TO BE SOLVED: To provide a capacitor structure and the manufacture thereof which has a high-dielectric-constant film such as BSTO films formed on a metal film of Ru, etc., of conductive oxide film of SRO, etc., having irregularities. SOLUTION: The semiconductor device comprises a first capacitor electrode 4 at least a part of which is made of a metal film or conductive metal oxide film and the thickness of which continuously varies, a high-dielectric-constant film 5 formed on the first capacitor electrode 4, and a second capacitor electrode 6 formed at a position facing the first capacitor electrode 4 through the high- dielectric-constant film 5.
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