| 摘要 |
PROBLEM TO BE SOLVED: To form a lower permittivity insulation film without lowering reliability due to a degeneration layer by a method wherein temperatures of a semiconductor substrate are increased up to deposition temperatures of an insulation film. SOLUTION: Not by a heating method by an oxygen ion impact, but by a heating method using a resistant heating heater, substrate temperatures are increased up to temperatures required for forming an SiOF film 4. Therefore, a CH3-SiO2 film is not oxidized. SiO4 and O2 as material gases are introduced into a reactive container at 20 SCCM and 40 SCCM, respectively, and the pressure is held at 5.0 mTorr, and induction power is set to be 2000 W, and the SiOF film 4 is formed on the entire surface by a high dense plasma CVD method. An Al wiring of a second layer and on is formed on the SiOF film 4. A degeneration layer which is a cause of generating HF is not formed, and therefore it is possible to form a lower permittivity interlayer insulation film by use of the high dense plasma CVD method without lowering reliability.
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