| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a hard mask pattern for defining active regions arrayed in a matrix below a resolution limit of exposure equipment. SOLUTION: A hard mask film 103 and a first mask pattern 105 are formed on a semiconductor substrate 101. A second mask pattern 107, which includes a first pattern crossing the first mask pattern and a second pattern disposed between first mask patterns, is formed. A third mask pattern is formed between the first patterns. Etching is carried out so that the first mask pattern is left in a region where the first pattern and first mask pattern cross each other and the second pattern is left in a region where the first pattern and second pattern cross each other. The hard mask pattern is formed using the left first mask pattern and second mask pattern as an etching mask. COPYRIGHT: (C)2009,JPO&INPIT
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