Photoelectric conversion apparatus, image pickup system, and method for manufacturing photoelectric conversion apparatus

摘要

A photoelectric conversion section contains a semiconductor element having a laminated structure which contains an electroconductor, a semiconductor, and an insulator provided between the electroconductor and the semiconductor, in which the insulator is a silicon oxide film containing nitrogen in a main portion located between the electroconductor and the semiconductor.

主权项

1. A photoelectric conversion apparatus, comprising:
a plurality of semiconductor elements disposed in a photoelectric conversion section, each of the plurality of the semiconductor elements including an electroconductor, a semiconductor, and a silicon oxide film provided between the electroconductor and the semiconductor, wherein the silicon oxide film contains nitrogen, a maximum nitrogen concentration of the silicon oxide film is higher than 0.10 atomic % and 10.00 atomic % or lower, and an interface nitrogen concentration in a surface at a side of the semiconductor of the silicon oxide film is 0.10 atomic % or lower.