FILM FORMATION METHOD AND THIN-FILM TRANSISTOR PRODUCTION METHOD

摘要

Provided is a film formation method that makes it possible to minimize decreases in the electrical resistance of an oxide semiconductor film even when a fluorinated silicon nitride film is formed directly on the oxide semiconductor film. The film formation method is provided with: a surface treatment step 40 in which a substance comprising an oxide semiconductor film on a substrate is prepared, plasma is generated using a mixed gas of oxygen and hydrogen which contains hydrogen at a rate of 8% or less (not including 0), and the plasma is used to treat the surface of the oxide semiconductor film; a film formation step 42 in which a fluorinated silicon nitride film (a SiN:F film) is subsequently formed on the oxide semiconductor film by a plasma CVD method in which plasma is generated using a raw material gas containing silicon tetrafluoride gas and nitrogen gas; and an annealing step 44 in which the substrate and the film thereon are subsequently heated.