发明名称 MANUFACTURING METHOD OF SUBSTRATE GRAPHENE GROWTH WITHOUT USING METAL CATALYST AND SUBSTRATE GRAPHENE GROWTH WITHOUT USING METAL CATALYST
摘要 Provided are a manufacturing method of catalyst-free substrate grown graphene, and catalyst-free substrate grown graphene. The manufacturing method of catalyst-free substrate grown graphene comprises the following steps of: (a) arranging a metal layer on a substrate; (b) supplying etching gas and carbon-containing gas, and conducting atmospheric pressure chemical vapor deposition (APCVD); (c) supplying etching gas on the catalyst-free layer in the carbon-containing supply, and growing graphene on the catalyst-free layer; and (d) growing graphene on the substrate without having the catalyst-free layer by continuously removing all of the catalyst-free layer by the etching gas.
申请公布号 KR20160104865(A) 申请公布日期 2016.09.06
申请号 KR20150027691 申请日期 2015.02.27
申请人 LEE, YOUN TEK 发明人 LEE, YOUN TEK
分类号 C01B31/04 主分类号 C01B31/04
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