MAGNETIC MEMORY DEVICE

摘要

A magnetic memory device includes a semiconductor substrate; a magnetoresistive element provided on the semiconductor substrate. The magnetoresistive element includes a storage layer, a tunnel barrier layer, and a reference layer which are stacked, the reference layer having a magnetization direction perpendicular to a principal surface of the semiconductor substrate. The magnetic memory device further includes a magnetic field generation section provided away from the magnetoresistive element and configured to generate a magnetic field perpendicular to the principal surface of the semiconductor substrate. The semiconductor substrate, the magnetoresistive element and the magnetic field generation section are integrated as one unit.

主权项

1. A magnetic memory device comprising:
a semiconductor substrate; a magnetoresistive element provided on the semiconductor substrate and comprising a storage layer, a tunnel barrier layer, and a reference layer which are stacked, the reference layer having a magnetization direction perpendicular to a principal surface of the semiconductor substrate; and a magnetic field generation section provided away from the magnetoresistive element and configured to generate a magnetic field perpendicular to the principal surface of the semiconductor substrate, wherein the semiconductor substrate, the magnetoresistive element and the magnetic field generation section are integrated as one unit.