| 发明名称 | Semiconductor device and method of manufacturing the same | ||
| 摘要 | A semiconductor device includes a wiring substrate including a first electrode in which a cross-sectional shape is an inverted trapezoidal shape, a semiconductor chip including a second electrode in which a cross-sectional shape is an inverted trapezoidal shape, a metal bonding material bonding a tip end of the first electrode and a tip end of the second electrode which face each other, and an underfill resin filled between the wiring substrate and the semiconductor chip, the underfill resin covering a side face of each of the first electrode and the second electrode and a side face of the metal bonding material. | ||
| 申请公布号 | US9530744(B2) | 申请公布日期 | 2016.12.27 |
| 申请号 | US201414554550 | 申请日期 | 2014.11.26 |
| 申请人 | SHINKO ELECTRIC INDUSTRIES CO., LTD. | 发明人 | Oi Kiyoshi;Otake Satoshi |
| 分类号 | H01L29/40;H01L23/00;H01L23/498;H01L23/31;H01L25/10 | 主分类号 | H01L29/40 |
| 代理机构 | Kratz, Quintos & Hanson, LLP | 代理人 | Kratz, Quintos & Hanson, LLP |
| 主权项 | 1. A semiconductor device, comprising: a wiring substrate including a first electrode having a cross-sectional shape which is an inverted trapezoidal shape in which a width of a base end is narrower than a width of a tip end; a semiconductor chip including a second electrode having a cross-sectional shape which is an inverted trapezoidal shape in which a width of a base end is narrower than a width of a tip end; a metal bonding material bonding the tip end of the first electrode and the tip end of the second electrode which face each other; and a first underfill resin filled between the wiring substrate and the semiconductor chip, the first underfill resin covering a side face of each of the first electrode and the second electrode and a side face of the metal bonding material. | ||
| 地址 | Nagano-shi JP | ||