Thermally enhanced structure for multi-chip device

摘要

A multi-chip semiconductor device comprises a thermally enhanced structure, a first semiconductor chip, a second semiconductor chip, an encapsulation layer formed on top of the first semiconductor chip and the second semiconductor chip. The multi-chip semiconductor device further comprises a plurality of thermal vias formed in the encapsulation layer. The thermally enhanced structure comprises a heat sink block attached to a first semiconductor die. The heat sink block may further comprise a variety of thermal vias and thermal openings. By employing the thermal enhanced structure, the thermal performance of the multi-chip semiconductor device can be improved.

主权项

1. An apparatus comprising:
a first heat sink on a first side of a first semiconductor die, wherein the first heat sink comprises at least one thermal via and one thermal opening; the first semiconductor die having a second side coupled to an interposer through a plurality of bumps; and a substrate having a first side coupled to the interposer through a plurality of solder balls, wherein the first semiconductor die is placed between the interposer and the substrate and there is an air gap between a non-bonding surface of the first heat sink and the first side of the substrate.