发明名称 |
Process for fabricating liquid crystal electro-optical device comprising complementary thin film field effect transistors |
摘要 |
A process reduced in mask steps for use in the fabrication of a thin film transistor having an LDD structure, comprising anodically oxidizing a gate electrode of a thin film transistor and performing ion implantation using the thus formed anodic oxide film as the mask. Also claimed is a similar process for fabricating a p-channel transistor and an n-channel transistor on a single substrate, comprising performing ion implantation of an impurity of the first conductive type to both of the transistor regions by using the anodic oxide film as a mask, and then performing ion implantation of an impurity of the second conductive type while masking one of the transistor regions with a resist.
|
申请公布号 |
US5985701(A) |
申请公布日期 |
1999.11.16 |
申请号 |
US19970851219 |
申请日期 |
1997.05.05 |
申请人 |
SEMICONDUCTOR ENERGY LABARATORY CO., LTD. |
发明人 |
TAKEI, MICHIKO;OHORI, TATSUYA;ZHANG, HONGYONG;UOCHI, HIDEKI |
分类号 |
G02F1/1343;G02F1/136;G02F1/1368;H01L21/316;H01L21/336;H01L21/77;H01L21/84;H01L29/786;(IPC1-7):H01L21/336;H01L21/823 |
主分类号 |
G02F1/1343 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|