| 发明名称 |
COMPOUND SEMICONDUCTOR ELEMENT BASED ON GROUP III ELEMENT NITRIDE |
| 摘要 |
A layer of a metal nitride represented by (Ti1-XAX)N (wherein A is at least one metal selected among aluminum, gallium, and indium) is formed, and a layer of a compound semiconductor based on a Group III element nitride is formed on the metal nitride layer. A titanium layer is interposed between the metal nitride layer with a sufficient thickness and a substrate. Removing the titanium layer gives a Group III element nitride compound semiconductor element.
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| 申请公布号 |
WO02056393(A1) |
申请公布日期 |
2002.07.18 |
| 申请号 |
WO2002JP00098 |
申请日期 |
2002.01.10 |
| 申请人 |
TOYODA GOSEI CO., LTD.;CHIYO, TOSHIAKI;ITO, JUN;SHIBATA, NAOKI |
发明人 |
CHIYO, TOSHIAKI;ITO, JUN;SHIBATA, NAOKI |
| 分类号 |
H01L21/20;H01L21/203;H01L21/205;H01L31/10;H01L33/06;H01L33/10;H01L33/32;(IPC1-7):H01L33/00;C30B29/40 |
主分类号 |
H01L21/20 |
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