SILICON CARBIDE SINGLE-CRYSTAL EPITAXIAL WAFER AND METHOD FOR PRODUCING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a high quality silicon carbide single-crystal epitaxial wafer for manufacturing a semiconductor element excellent in characteristics and a method for producing the same.

SOLUTION: The silicon carbide single-crystal epitaxial wafer having epitaxial thin film on a silicon carbide single crystal substrate comprises a first epitaxial thin film in which the epitaxial thin film is formed on the silicon carbide single crystal substrate, and a second epitaxial thin film which is formed within the first epitaxial thin film, and the method for producing the same are disclosed.

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