| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method and apparatus of manufacturing a semiconductor device which is capable of forming a desired pattern. <P>SOLUTION: A method of manufacturing a semiconductor device comprising the steps of: a step (S24) of extracting fine-graphic patterns each of which is smaller in size by a predetermined size than corresponding one of plural patterns which form a pattern (63); and a step (S23) of irradiating an electron beam (50) formed as corresponding to each of the plural patterns onto a pattern region (52) being corresponding to each of the plural patterns on a substrate (51). Wherein, in the extraction step (S24), the size of an extracted fine-graphic pattern is compared with the corresponding predetermined size. In the irradiating step (S23), an irradiation intensity per unit area of an electron beam (50) which is formed as corresponding to a fine-graphic pattern and irradiated onto a fine-graphic-pattern region (52) of a substrate (51) being corresponding to a fine-graphic pattern is larger than that of an electron beam (50) which is formed as corresponding to a non-fine-graphic pattern that is not extracted from plural fine-graphic patterns in the extracting step (S24) and irradiated onto a non-fine-graphic-pattern region (52) of the substrate (51) being corresponding to a non-fine-graphic pattern. <P>COPYRIGHT: (C)2009,JPO&INPIT |
