| 发明名称 | FinFET structure and method of manufacturing the same | ||
| 摘要 | A semiconductor structure and a method for forming the same are provided. The method includes providing a substrate, forming a fin structure extruding from the substrate, forming shallow trench isolations over the substrate, and forming an oxide material over the fin structure. The method further includes forming a carbon-doped amorphous silicon layer or a carbon-doped poly silicon layer over the oxide material, wherein the forming a carbon-doped amorphous silicon layer or a carbon-doped poly silicon layer includes doping carbon in a range of from about 5E19/cm3 to about 1E22/cm3. | ||
| 申请公布号 | US9406675(B1) | 申请公布日期 | 2016.08.02 |
| 申请号 | US201514658511 | 申请日期 | 2015.03.16 |
| 申请人 | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. | 发明人 | Wu Cheng-Ta;Chen Cheng-Wei;Wu Hong-Yi;Jangjian Shiu-Ko;You Wei-Ming;Wang Ting-Chun |
| 分类号 | H01L21/8234;H01L21/28;H01L29/788;H01L27/088;H01L21/02;H01L29/66;H01L29/06;H01L21/265;H01L29/423 | 主分类号 | H01L21/8234 |
| 代理机构 | WPAT, P.C., Intellectual Property Attorneys | 代理人 | WPAT, P.C., Intellectual Property Attorneys ;King Anthony |
| 主权项 | 1. A method of forming a FinFET, comprising: providing a substrate; forming a plurality of stripes on the substrate; forming an oxide material over a top surface and a sidewall of the one of the plurality of stripes; forming a carbon-doped silicon layer over the oxide material at a first temperature; and elevating the temperature to a second temperature greater than the first temperature, wherein the forming the carbon-doped silicon layer comprises an in-situ doping operation. | ||
| 地址 | Hsinchu TW | ||