METHOD OF DEVELOPING E-BEAM RESIST FOR PATTERNING

摘要

An electron beam resist developing method is provided to form a high density pattern with the minimum wiring width by developing an electron beam resist. A substrate coated with an electron beam resist is prepared(S210). The electronic beam is irradiated in the pattern formation part of substrate(S220). The irradiated substrate is developed by a first developer(S230). The impurity is etched on the electron beam resist(S240). The etched substrate is developed by a second developer(S250).