THE METHOD FOR FABRICATING NON-VOLATILE MEMORY DEVICE HAVING CHARGE TRAP LAYER

摘要

A method for forming a non-volatile memory device having a charge trap layer is provided to improve a data-keeping characteristic by improving surface uniformity of a silicon nitride layer as a charge trap layer. A tunneling layer is formed on a semiconductor substrate(200). A first nucleation layer is formed by supplying a silicon nitride deposition source onto the tunneling layer. A first deposition process for growing the first nucleation layer is performed to form a first charge trap layer. A non-uniform surface of the first charge trap layer is improved by performing a thermal process on the first charge trap layer. A second nucleation layer is formed on the first charge trap layer. A second charge trap layer is formed by performing a second deposition process for growing the second nucleation layer. A charge trap layer is formed by using the first and second charge trap layer. A light shielding layer and a control gate electrode are formed on the charge trap layer. A gate stack(265) is formed by patterning the control gate electrode, the light shielding layer, the charge trap layer, and the tunneling layer.