Geometry of MOS device with low on-resistance

摘要

A Metal Oxide Semiconductor (MOS) device formed on a substrate and a method for forming the MOS device. The MOS device includes a drain region, a gate region surrounding the drain region, source regions arranged around the gate region and across from the drain region, and bulk regions arranged around the gate region and separating the source regions. The gate region is formed in a loop around the drain region. In this manner, the on-resistance (Ron) of a MOS device is decreased without also increasing the area of the MOS device.

主权项

1. A Metal Oxide Semiconductor (MOS) device formed on a substrate, the MOS device comprising:
a drain region, wherein the drain region has a shape of a rectangle or a square; a gate region (i) surrounding the drain region and (ii) formed in a closed loop around the drain region, wherein the closed loop has a shape corresponding to the shape of the drain region; a plurality of source regions (i) arranged around the gate region and (ii) across from the drain region; and a plurality of bulk regions arranged around the gate region, wherein a first source region of the plurality of source regions comprises a first side that (i) faces the drain region and (ii) has a first maximum width, wherein a second source region of the plurality of source regions comprises a first side that (i) faces the drain region and (ii) has a second maximum width, the second maximum width being substantially different from the first maximum width, wherein the first maximum width of the first side of the first source region is substantially equal to a maximum width of the gate region, wherein the second maximum width of the first side of the second source region is substantially equal to a maximum width of the drain region, and wherein the maximum width of the gate region is different from the maximum width of the drain region.