| 摘要 |
This invention relates to a Metal Oxide on Semiconductor technology capacitor and an integrated semiconductor circuit comprising a MOS technology capacitor or a Bipolar Complementary Metal Oxide on Semiconductor technology capacitor comprising said MOS technology capacitor. The integrated MOS technology capacitor is comprising at least one conducting gate layer 1 , preferably a polycrystaline semiconductor layer, at least one insulating layer 2 , preferably a metal oxide layer, adjacent to said gate layer 1 and at least one semiconductor layer 3 adjacent to said metal insulating layer 2 , wherein at least an area of said semiconductor layer 3 is highly doped.
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