| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that has a barrier layer excellent in adhesion with copper and in copper diffusion prevention performance, and a manufacturing method for the semiconductor device. SOLUTION: In a barrier-layer forming step in the semiconductor device manufacturing method adopting damascene interconnect, it is controlled so that a nitrogen gas density in an atmosphere around a semiconductor substrate is relatively low at an early stage and at a final stage of the step and relatively high at an intermediate stage of the step. By this, the barrier layer, interposed between first/second copper wirings while being deposited on an insulating layer, has a profile that a nitrogen density included in its material is changed so as to be relatively low at a boundary part in-between the first copper wiring and at a boundary part in-between the second copper wiring and to be relatively high at a central part sandwiched by the boundary parts. COPYRIGHT: (C)2008,JPO&INPIT |
